IPI65R110CFDXKSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Power Dissipation (Max): 277.8W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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Технічний опис IPI65R110CFDXKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 31.2A TO262-3, Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO262-3, Vgs(th) (Max) @ Id: 4.5V @ 1.3mA, Power Dissipation (Max): 277.8W (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.
Інші пропозиції IPI65R110CFDXKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IPI65R110CFDXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO262-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 31.2A Power dissipation: 277.8W Case: PG-TO262-3 On-state resistance: 0.11Ω Mounting: THT Kind of channel: enhancement Gate-source voltage: ±20V Technology: CoolMOS™ |
товару немає в наявності |
В кошику од. на суму грн. |
| IPI65R110CFDXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO262-3
On-state resistance: 0.11Ω
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: CoolMOS™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO262-3
On-state resistance: 0.11Ω
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: CoolMOS™
товару немає в наявності
В кошику
од. на суму грн.