IPI65R280E6XKSA1 Infineon Technologies

Description: MOSFET N-CH 650V 13.8A TO262-3, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO262-3-1, Vgs(th) (Max) @ Id: 3.5V @ 440µA, Power Dissipation (Max): 104W (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.