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IPI65R380C6XKSA1

IPI65R380C6XKSA1 Infineon Technologies

IPI65R380C6_2_1.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432ba3fa6f012bf2e612a177ee
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 10.6A TO262-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+170.08 грн
50+80.16 грн
100+72.10 грн
500+54.38 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
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Технічний опис IPI65R380C6XKSA1 Infineon Technologies

Description: MOSFET N-CH 650V 10.6A TO262-3, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO262-3, Vgs(th) (Max) @ Id: 3.5V @ 320µA, Power Dissipation (Max): 83W (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V.

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IPI65R380C6XKSA1 IPI65R380C6XKSA1 INFINEON TECHNOLOGIES IPI65R380C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IPI65R380C6XKSA1 IPI65R380C6-DTE.pdf
IPI65R380C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.6A
Power dissipation: 83W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.