IPL60R095CFD7AUMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N CH
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1.4A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
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Технічний опис IPL60R095CFD7AUMA1 Infineon Technologies
Description: MOSFET N CH, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 1.4A, 10V, Power Dissipation (Max): 147W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 570µA, Supplier Device Package: PG-VSON-4-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V.
Інші пропозиції IPL60R095CFD7AUMA1 за ціною від 138.89 грн до 551.76 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IPL60R095CFD7AUMA1 | Infineon Technologies |
Description: MOSFET N CH Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 1.4A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 570µA Supplier Device Package: PG-VSON-4-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V |
на замовлення 4363 шт: термін постачання 21-31 дні (днів) |
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IPL60R095CFD7AUMA1 | Infineon Technologies |
MOSFET HIGH POWER_NEW |
на замовлення 3094 шт: термін постачання 21-30 дні (днів) |
|
| IPL60R095CFD7AUMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N CH
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1.4A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
Description: MOSFET N CH
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 1.4A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
на замовлення 4363 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 343.34 грн |
| 10+ | 219.14 грн |
| 100+ | 156.15 грн |
| 500+ | 138.89 грн |
| IPL60R095CFD7AUMA1 |
|
Виробник: Infineon Technologies
MOSFET HIGH POWER_NEW
MOSFET HIGH POWER_NEW
на замовлення 3094 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 551.76 грн |
| 10+ | 488.76 грн |
| 100+ | 348.18 грн |
| 500+ | 298.14 грн |