IPL60R180P6AUMA1 Infineon Technologies
на замовлення 7151 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 123.22 грн |
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Технічний опис IPL60R180P6AUMA1 Infineon Technologies
Description: MOSFET N-CH 600V 22.4A 4VSON, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V, Power Dissipation (Max): 176W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 750µA, Supplier Device Package: PG-VSON-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V.
Інші пропозиції IPL60R180P6AUMA1
| Фото | Назва | Виробник | Інформація |
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IPL60R180P6AUMA1 | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 600V 22.4A Automotive 5-Pin Thin-PAK T/R |
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IPL60R180P6AUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22.4A; 176W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 22.4A Power dissipation: 176W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
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IPL60R180P6AUMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 600V 22.4A 4VSON Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 750µA Supplier Device Package: PG-VSON-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V |
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IPL60R180P6AUMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 600V 22.4A 4VSON Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V Power Dissipation (Max): 176W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 750µA Supplier Device Package: PG-VSON-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V |
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IPL60R180P6AUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22.4A; 176W; PG-VSON-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 22.4A Power dissipation: 176W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Kind of channel: enhanced |
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