| Кількість | Ціна |
|---|---|
| 2+ | 201.46 грн |
| 10+ | 133.74 грн |
| 100+ | 93.04 грн |
| 500+ | 80.35 грн |
| 1000+ | 74.01 грн |
| 3000+ | 67.87 грн |
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Технічний опис IPL60R185C7AUMA1 Infineon Technologies
Description: MOSFET N-CH 600V 13A 4VSON, Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-VSON-4, Vgs(th) (Max) @ Id: 4V @ 260µA, Power Dissipation (Max): 77W (Tc), Rds On (Max) @ Id, Vgs: 185mOhm @ 5.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-PowerTSFN, Packaging: Tape & Reel (TR).
Інші пропозиції IPL60R185C7AUMA1 за ціною від 104.38 грн до 223.61 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IPL60R185C7AUMA1 | Infineon Technologies |
 Description: MOSFET N-CH 600V 13A 4VSONPackaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 5.3A, 10V Power Dissipation (Max): 77W (Tc) Vgs(th) (Max) @ Id: 4V @ 260µA Supplier Device Package: PG-VSON-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V |
на замовлення 2922 шт: термін постачання 21-31 дні (днів) |
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| IPL60R185C7AUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 13A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 5.3A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Description: MOSFET N-CH 600V 13A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 5.3A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
на замовлення 2922 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 223.61 грн |
| 10+ | 180.66 грн |
| 100+ | 146.13 грн |
| 500+ | 121.90 грн |
| 1000+ | 104.38 грн |