IPL60R199CPAUMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 16.4A 4VSON
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
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Технічний опис IPL60R199CPAUMA1 Infineon Technologies
Description: MOSFET N-CH 600V 16.4A 4VSON, Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: PG-VSON-4, Vgs(th) (Max) @ Id: 3.5V @ 660µA, Power Dissipation (Max): 139W (Tc), Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-PowerTSFN, Packaging: Tape & Reel (TR).
Інші пропозиції IPL60R199CPAUMA1 за ціною від 102.43 грн до 271.97 грн
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IPL60R199CPAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 16.4A 4VSON Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 660µA Supplier Device Package: PG-VSON-4 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| IPL60R199CPAUMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 16.4A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Supplier Device Package: PG-VSON-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
Description: MOSFET N-CH 600V 16.4A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Supplier Device Package: PG-VSON-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 271.97 грн |
| 10+ | 172.49 грн |
| 100+ | 121.31 грн |
| 500+ | 102.43 грн |