IPL65R195C7AUMA1 Infineon Technologies

Description: MOSFET N-CH 650V 12A 4VSON, Package / Case: 4-PowerTSFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-VSON-4, Vgs(th) (Max) @ Id: 4V @ 290µA, Power Dissipation (Max): 75W (Tc), Rds On (Max) @ Id, Vgs: 195mOhm @ 2.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount.