IPL65R1K0C6SATMA1 Infineon Technologies

Description: MOSFET N-CH 650V 4.2A THIN-PAK, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V, Power Dissipation (Max): 34.7W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 150µA, Supplier Device Package: PG-TSON-8-2, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V.