Технічний опис IPL65R340CFDAUMA2 Infineon Technologies
Description: MOSFET N-CH 650V 10.9A 4VSON, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc), Rds On (Max) @ Id, Vgs: 340mOhm @ 4.4A, 10V, Power Dissipation (Max): 104.2W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 400µA, Supplier Device Package: PG-VSON-4, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V.
Інші пропозиції IPL65R340CFDAUMA2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IPL65R340CFDAUMA2 | Виробник : Infineon Technologies |
 650V CoolMOS CFD2 Power Transistor |
товару немає в наявності |
||
| IPL65R340CFDAUMA2 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 650V 10.9A 4VSON Packaging: Tape & Reel (TR) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.9A (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 4.4A, 10V Power Dissipation (Max): 104.2W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 400µA Supplier Device Package: PG-VSON-4 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
товару немає в наявності |
||
| IPL65R340CFDAUMA2 | Виробник : Infineon Technologies |
MOSFET LOW POWER_LEGACY |
товару немає в наявності |