на замовлення 4600 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 71.74 грн |
| 10+ | 58.2 грн |
| 100+ | 39.39 грн |
| 500+ | 33.38 грн |
| 1000+ | 26.1 грн |
| 2500+ | 25.57 грн |
| 5000+ | 24.37 грн |
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Технічний опис IPLK60R1K5PFD7ATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 3.8A THIN-PAK, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 40µA, Supplier Device Package: PG-TDSON-8-52, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V.
Інші пропозиції IPLK60R1K5PFD7ATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IPLK60R1K5PFD7ATMA1 | Виробник : Infineon Technologies |
 SP004748878 |
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IPLK60R1K5PFD7ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 600V 3.8A THIN-PAK Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 40µA Supplier Device Package: PG-TDSON-8-52 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V |
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IPLK60R1K5PFD7ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 600V 3.8A THIN-PAK Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 700mA, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 40µA Supplier Device Package: PG-TDSON-8-52 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 169 pF @ 400 V |
товар відсутній |