
на замовлення 1189 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна |
---|---|
2+ | 253.20 грн |
10+ | 185.28 грн |
100+ | 122.12 грн |
250+ | 107.41 грн |
500+ | 102.26 грн |
1000+ | 91.96 грн |
2000+ | 90.49 грн |
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Технічний опис IPLU250N04S41R7XTMA1 Infineon Technologies
Description: MOSFET N-CH 40V 250A 8HSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 4V @ 80µA, Supplier Device Package: PG-HSOF-8-1, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції IPLU250N04S41R7XTMA1
Фото | Назва | Виробник | Інформація |
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IPLU250N04S41R7XTMA1 | Виробник : Infineon Technologies |
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товару немає в наявності |
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![]() |
IPLU250N04S41R7XTMA1 | Виробник : Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 80µA Supplier Device Package: PG-HSOF-8-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
|
![]() |
IPLU250N04S41R7XTMA1 | Виробник : Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 80µA Supplier Device Package: PG-HSOF-8-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |