IPM018N10NM5LF2AUMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: IPM018N10NM5LF2AUMA1
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V
Power Dissipation (Max): 3.8W (Ta), 349W (Tc)
Vgs(th) (Max) @ Id: 3.45V @ 240µA
Supplier Device Package: PG-HSOG-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V
на замовлення 360 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 585.99 грн |
| 10+ | 383.73 грн |
| 100+ | 297.73 грн |
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Технічний опис IPM018N10NM5LF2AUMA1 Infineon Technologies
Description: IPM018N10NM5LF2AUMA1, Packaging: Tape & Reel (TR), Package / Case: 4-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V, Power Dissipation (Max): 3.8W (Ta), 349W (Tc), Vgs(th) (Max) @ Id: 3.45V @ 240µA, Supplier Device Package: PG-HSOG-4-1, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V.
Інші пропозиції IPM018N10NM5LF2AUMA1
| Фото | Назва | Виробник | Інформація |
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IPM018N10NM5LF2AUMA1 | Виробник : Infineon Technologies |
Description: IPM018N10NM5LF2AUMA1 Packaging: Tape & Reel (TR) Package / Case: 4-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 285A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 15V Power Dissipation (Max): 3.8W (Ta), 349W (Tc) Vgs(th) (Max) @ Id: 3.45V @ 240µA Supplier Device Package: PG-HSOG-4-1 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 50 V |
товару немає в наявності |
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IPM018N10NM5LF2AUMA1 | Виробник : Infineon Technologies |
MOSFETs OptiMOS 5 single N-channel Linear FET 2 100 V, 176 A in 8 mm x 8 mm footprint |
товару немає в наявності |