IPN50R1K4CEATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 4.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
| Кількість | Ціна |
|---|---|
| 3000+ | 13.25 грн |
| 6000+ | 11.69 грн |
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Технічний опис IPN50R1K4CEATMA1 Infineon Technologies
Description: MOSFET N-CH 500V 4.8A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V, Power Dissipation (Max): 5W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 70µA, Supplier Device Package: PG-SOT223-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 13V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V.
Інші пропозиції IPN50R1K4CEATMA1 за ціною від 10.08 грн до 56.30 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IPN50R1K4CEATMA1 | Infineon Technologies |
MOSFETs CONSUMER |
на замовлення 5140 шт: термін постачання 21-30 дні (днів) |
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IPN50R1K4CEATMA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 4.8A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 70µA Supplier Device Package: PG-SOT223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V |
на замовлення 7732 шт: термін постачання 21-31 дні (днів) |
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| IPN50R1K4CEATMA1 |
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Виробник: Infineon Technologies
MOSFETs CONSUMER
MOSFETs CONSUMER
на замовлення 5140 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 47.36 грн |
| 12+ | 29.42 грн |
| 100+ | 17.20 грн |
| 500+ | 13.67 грн |
| 1000+ | 12.26 грн |
| 3000+ | 10.85 грн |
| 6000+ | 10.08 грн |
| IPN50R1K4CEATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 4.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
Description: MOSFET N-CH 500V 4.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
на замовлення 7732 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 56.30 грн |
| 10+ | 33.60 грн |
| 100+ | 21.66 грн |
| 500+ | 15.51 грн |
| 1000+ | 13.95 грн |


