IPN60R2K0PFD7SATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
| Кількість | Ціна |
|---|---|
| 3000+ | 14.64 грн |
| 6000+ | 12.97 грн |
| 9000+ | 12.40 грн |
Відгуки про товар
Написати відгук
Технічний опис IPN60R2K0PFD7SATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 3A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-3, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, Power Dissipation (Max): 6W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 30µA, Supplier Device Package: PG-SOT223-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V.
Інші пропозиції IPN60R2K0PFD7SATMA1 за ціною від 11.21 грн до 68.98 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPN60R2K0PFD7SATMA1 | Infineon Technologies |
MOSFETs CONSUMER |
на замовлення 3928 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
IPN60R2K0PFD7SATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 3A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-3 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 6W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 30µA Supplier Device Package: PG-SOT223-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V |
на замовлення 13562 шт: термін постачання 21-31 дні (днів) |
|
| IPN60R2K0PFD7SATMA1 |
![]() |
Виробник: Infineon Technologies
MOSFETs CONSUMER
MOSFETs CONSUMER
на замовлення 3928 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 50.90 грн |
| 10+ | 35.99 грн |
| 100+ | 21.36 грн |
| 500+ | 17.27 грн |
| 1000+ | 15.58 грн |
| 3000+ | 11.42 грн |
| 6000+ | 11.21 грн |
| IPN60R2K0PFD7SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
Description: MOSFET N-CH 600V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 30µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 134 pF @ 400 V
на замовлення 13562 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 68.98 грн |
| 10+ | 41.16 грн |
| 100+ | 26.75 грн |
| 500+ | 19.27 грн |
| 1000+ | 17.39 грн |



