| Кількість | Ціна |
|---|---|
| 9+ | 40.54 грн |
| 10+ | 34.85 грн |
| 100+ | 21.50 грн |
| 500+ | 18.25 грн |
| 1000+ | 14.59 грн |
| 3000+ | 14.45 грн |
| 6000+ | 13.60 грн |
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Технічний опис IPN70R1K2P7SATMA1 Infineon Technologies
Description: MOSFET N-CH 700V 4.5A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V, Power Dissipation (Max): 6.3W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 40µA, Supplier Device Package: PG-SOT223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V.
Інші пропозиції IPN70R1K2P7SATMA1 за ціною від 16.79 грн до 43.61 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IPN70R1K2P7SATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 700V 4.5A SOT223Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-SOT223 Vgs(th) (Max) @ Id: 3.5V @ 40µA Power Dissipation (Max): 6.3W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
на замовлення 1468 шт: термін постачання 21-31 дні (днів) |
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| IPN70R1K2P7SATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 4.5A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-SOT223
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Power Dissipation (Max): 6.3W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 700V 4.5A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-SOT223
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Power Dissipation (Max): 6.3W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
на замовлення 1468 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 43.61 грн |
| 10+ | 36.35 грн |
| 100+ | 25.16 грн |
| 500+ | 19.73 грн |
| 1000+ | 16.79 грн |