IPN95R3K7P7ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 2A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V
| Кількість | Ціна |
|---|---|
| 3000+ | 22.59 грн |
| 6000+ | 20.12 грн |
| 9000+ | 19.30 грн |
| 15000+ | 17.24 грн |
| 21000+ | 16.72 грн |
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Технічний опис IPN95R3K7P7ATMA1 Infineon Technologies
Description: MOSFET N-CH 950V 2A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V, Power Dissipation (Max): 6W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 40µA, Supplier Device Package: PG-SOT223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V.
Інші пропозиції IPN95R3K7P7ATMA1 за ціною від 20.65 грн до 88.81 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IPN95R3K7P7ATMA1 | Infineon Technologies |
MOSFETs LOW POWER_NEW |
на замовлення 32421 шт: термін постачання 21-30 дні (днів) |
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IPN95R3K7P7ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 950V 2A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V Power Dissipation (Max): 6W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-SOT223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V |
на замовлення 26156 шт: термін постачання 21-31 дні (днів) |
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| IPN95R3K7P7ATMA1 |
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Виробник: Infineon Technologies
MOSFETs LOW POWER_NEW
MOSFETs LOW POWER_NEW
на замовлення 32421 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 74.99 грн |
| 10+ | 50.58 грн |
| 100+ | 31.22 грн |
| 500+ | 26.36 грн |
| 1000+ | 23.68 грн |
| 3000+ | 21.64 грн |
| 6000+ | 20.65 грн |
| IPN95R3K7P7ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 2A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V
Description: MOSFET N-CH 950V 2A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 800mA, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 400 V
на замовлення 26156 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 88.81 грн |
| 10+ | 53.75 грн |
| 100+ | 35.41 грн |
| 500+ | 25.83 грн |
| 1000+ | 23.44 грн |