| Кількість | Ціна |
|---|---|
| 3+ | 150.48 грн |
| 10+ | 123.20 грн |
| 100+ | 93.04 грн |
| 250+ | 92.33 грн |
| 500+ | 77.53 грн |
| 1000+ | 76.12 грн |
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Технічний опис IPP023N04NGXKSA1 Infineon Technologies
Description: MOSFET N-CH 40V 90A TO220-3, Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO220-3, Vgs(th) (Max) @ Id: 4V @ 95µA, Power Dissipation (Max): 167W (Tc).
Інші пропозиції IPP023N04NGXKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IPP023N04NGXKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 40V 90A TO220-3Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 4V @ 95µA Power Dissipation (Max): 167W (Tc) |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. |
| IPP023N04NGXKSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 90A TO220-3
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 95µA
Power Dissipation (Max): 167W (Tc)
Description: MOSFET N-CH 40V 90A TO220-3
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 95µA
Power Dissipation (Max): 167W (Tc)
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.