| Кількість | Ціна |
|---|---|
| 3+ | 120.88 грн |
| 10+ | 98.08 грн |
| 100+ | 66.18 грн |
| 500+ | 55.82 грн |
| 1000+ | 45.39 грн |
| 2000+ | 42.78 грн |
| 5000+ | 40.74 грн |
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Технічний опис IPP026N04NF2SAKMA1 Infineon Technologies
Description: TRENCH PG-TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: PG-TO220-3-U05, Vgs(th) (Max) @ Id: 3.4V @ 81µA, Power Dissipation (Max): 3.8W (Ta), 150W (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 70A, 10V, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції IPP026N04NF2SAKMA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IPP026N04NF2SAKMA1 | Infineon Technologies |
 Description: TRENCH PG-TO220-3Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: PG-TO220-3-U05 Vgs(th) (Max) @ Id: 3.4V @ 81µA Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| IPP026N04NF2SAKMA1 |
|
Виробник: Infineon Technologies
Description: TRENCH PG-TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO220-3-U05
Vgs(th) (Max) @ Id: 3.4V @ 81µA
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRENCH PG-TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO220-3-U05
Vgs(th) (Max) @ Id: 3.4V @ 81µA
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.