IPP028N08N3GXKSA1 Infineon

Description: MOSFET N-CH 80V 100A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: PG-TO220-3, Vgs(th) (Max) @ Id: 3.5V @ 270µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.