IPP038N15NM6AKSA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 178A (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 76A, 15V, Power Dissipation (Max): 3.8W (Ta), 294W (Tc), Vgs(th) (Max) @ Id: 4V @ 179µA, Supplier Device Package: PG-TO220-3-1, Drive Voltage (Max Rds On, Min Rds On): 8V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 75 V.