Технічний опис IPP048N06LG infineon
Description: MOSFET N-CH 60V 100A TO220-3, Vgs(th) (Max) @ Id: 2V @ 270µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-TO220-3-1.
Інші пропозиції IPP048N06LG
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
IPP048N06L G | Infineon Technologies |
Description: MOSFET N-CH 60V 100A TO220-3Vgs(th) (Max) @ Id: 2V @ 270µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO220-3-1 |
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В кошику од. на суму грн. |
| IPP048N06L G |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A TO220-3
Vgs(th) (Max) @ Id: 2V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Description: MOSFET N-CH 60V 100A TO220-3
Vgs(th) (Max) @ Id: 2V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
товару немає в наявності
В кошику
од. на суму грн.



