IPP051N15N5AKSA1

Виробник: Infineon Technologies
Trans MOSFET N-CH 150V 120A 3-Pin(3+Tab) TO-220 Tube

Виробник: Infineon Technologies
Trans MOSFET N-CH 150V 120A 3-Pin(3+Tab) TO-220 Tube

Виробник: Infineon
MOSFET N-CH 150V 120A TO220-3 Транзистори

Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4.6V @ 264µA
Power Dissipation (Max): 300mW (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube

Виробник: Infineon Technologies
MOSFETs TRENCH >=100V

Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 115A; Idm: 480A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 115A
Power dissipation: 300W
Case: PG-TO220-3
On-state resistance: 5.1mΩ
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™ 5
Pulsed drain current: 480A