IPP08CNE8NG Infineon Technologies

Description: MOSFET N-CH 85V 95A TO220-3, Supplier Device Package: PG-TO220-3, Vgs(th) (Max) @ Id: 4V @ 130µA, Power Dissipation (Max): 167W (Tc), Rds On (Max) @ Id, Vgs: 6.4mOhm @ 95A, 10V, Current - Continuous Drain (Id) @ 25°C: 95A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 6690 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V, Drain to Source Voltage (Vdss): 85 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V.