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IPP100N08N3GXKSA1

IPP100N08N3GXKSA1 Infineon Technologies

Infineon_IPP100N08N3_G_DS_v02_02_EN-3164907.pdf
Виробник: Infineon Technologies
MOSFET N-Ch 80V 70A TO220-3 OptiMOS 3
на замовлення 209 шт:
термін постачання 21-30 дні (днів)
КількістьЦіна
3+145.55 грн
10+119.15 грн
100+82.46 грн
500+69.50 грн
1000+56.10 грн
5000+54.34 грн
Мінімальне замовлення: 3 шт
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Технічний опис IPP100N08N3GXKSA1 Infineon Technologies

Description: MOSFET N-CH 80V 70A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 46µA, Supplier Device Package: PG-TO220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 40 V.

Інші пропозиції IPP100N08N3GXKSA1

Фото Назва Виробник Інформація Доступність Ціна
IPP100N08N3GXKSA1 IPP100N08N3GXKSA1 Infineon Technologies IPP_I_B100N08N3_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ddc9372011e071f53b82619 Description: MOSFET N-CH 80V 70A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
IPP100N08N3GXKSA1 IPP_I_B100N08N3_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ddc9372011e071f53b82619
IPP100N08N3GXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 70A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.