IPP120N04S402AKSA1 Infineon Technologies
Виробник: Infineon Technologies
Trans MOSFET N-CH 40V 120A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101
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Технічний опис IPP120N04S402AKSA1 Infineon Technologies
Description: MOSFET N-CH 40V 120A TO220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 10740 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO220-3-1, Vgs(th) (Max) @ Id: 4V @ 110µA, Power Dissipation (Max): 158W (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Qualification: AEC-Q101, Grade: Automotive, Mounting Type: Through Hole, Package / Case: TO-220-3.
Інші пропозиції IPP120N04S402AKSA1 за ціною від 105.07 грн до 256.34 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPP120N04S402AKSA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 120A TO220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 10740 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 4V @ 110µA Power Dissipation (Max): 158W (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Qualification: AEC-Q101 Grade: Automotive Mounting Type: Through Hole Package / Case: TO-220-3 |
на замовлення 226 шт: термін постачання 21-31 дні (днів) |
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| IPP120N04S402AKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 120A TO220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10740 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Through Hole
Package / Case: TO-220-3
Description: MOSFET N-CH 40V 120A TO220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10740 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Through Hole
Package / Case: TO-220-3
на замовлення 226 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 256.34 грн |
| 10+ | 160.98 грн |
| 50+ | 123.91 грн |
| 100+ | 105.07 грн |