IPP147N12N3GXKSA1 INFINEON TECHNOLOGIES
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 56A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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Технічний опис IPP147N12N3GXKSA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 120V 56A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Drain to Source Voltage (Vdss): 120 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO220-3, Vgs(th) (Max) @ Id: 4V @ 61µA, Power Dissipation (Max): 107W (Tc), Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V, Current - Continuous Drain (Id) @ 25°C: 56A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції IPP147N12N3GXKSA1 за ціною від 37.94 грн до 126.08 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IPP147N12N3GXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 120V 56A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 4V @ 61µA Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V Current - Continuous Drain (Id) @ 25°C: 56A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 13495 шт: термін постачання 21-31 дні (днів) |
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| IPP147N12N3GXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 56A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 61µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 120V 56A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 61µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 13495 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 126.08 грн |
| 50+ | 58.60 грн |
| 100+ | 52.49 грн |
| 500+ | 39.19 грн |
| 1000+ | 37.94 грн |