IPP147N12N3GXKSA1 INFINEON TECHNOLOGIES
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 56A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 56A
Power dissipation: 107W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 103.77 грн |
| 10+ | 83.18 грн |
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Технічний опис IPP147N12N3GXKSA1 INFINEON TECHNOLOGIES
Description: INFINEON - IPP147N12N3GXKSA1 - Leistungs-MOSFET, n-Kanal, 120 V, 41 A, 0.0126 ohm, TO-220, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 120V, rohsCompliant: YES, Dauer-Drainstrom Id: 41A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 107W, Bauform - Transistor: TO-220, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.0126ohm, SVHC: No SVHC (21-Jan-2025).
Інші пропозиції IPP147N12N3GXKSA1 за ціною від 36.83 грн до 122.39 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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IPP147N12N3GXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 120V 56A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 4V @ 61µA Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V Current - Continuous Drain (Id) @ 25°C: 56A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 13495 шт: термін постачання 21-31 дні (днів) |
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IPP147N12N3GXKSA1 | INFINEON |
Description: INFINEON - IPP147N12N3GXKSA1 - Leistungs-MOSFET, n-Kanal, 120 V, 41 A, 0.0126 ohm, TO-220, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 120V rohsCompliant: YES Dauer-Drainstrom Id: 41A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 107W Bauform - Transistor: TO-220 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0126ohm SVHC: No SVHC (21-Jan-2025) |
на замовлення 262 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| IPP147N12N3GXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 56A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 61µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 120V 56A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 61µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 56A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 13495 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 122.39 грн |
| 50+ | 56.88 грн |
| 100+ | 50.95 грн |
| 500+ | 38.04 грн |
| 1000+ | 36.83 грн |
| IPP147N12N3GXKSA1 |
|
Виробник: INFINEON
Description: INFINEON - IPP147N12N3GXKSA1 - Leistungs-MOSFET, n-Kanal, 120 V, 41 A, 0.0126 ohm, TO-220, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 120V
rohsCompliant: YES
Dauer-Drainstrom Id: 41A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 107W
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0126ohm
SVHC: No SVHC (21-Jan-2025)
Description: INFINEON - IPP147N12N3GXKSA1 - Leistungs-MOSFET, n-Kanal, 120 V, 41 A, 0.0126 ohm, TO-220, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 120V
rohsCompliant: YES
Dauer-Drainstrom Id: 41A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 107W
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0126ohm
SVHC: No SVHC (21-Jan-2025)
на замовлення 262 шт:
термін постачання 21-31 дні (днів)