IPP16CN10LGXKSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 100V 54A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 54A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 61µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4190 pF @ 50 V
на замовлення 13937 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 348+ | 60.41 грн |
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Технічний опис IPP16CN10LGXKSA1 Infineon Technologies
Description: MOSFET N-CH 100V 54A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54A (Tc), Rds On (Max) @ Id, Vgs: 15.7mOhm @ 54A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 61µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4190 pF @ 50 V.
Інші пропозиції IPP16CN10LGXKSA1
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IPP16CN10LGXKSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 100V 54A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 15.7mOhm @ 54A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 61µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4190 pF @ 50 V |
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