IPP200N25N3GXKSA1 Infineon Technologies
| Кількість | Ціна |
|---|---|
| 1+ | 411.97 грн |
| 10+ | 391.50 грн |
| 25+ | 188.89 грн |
| 100+ | 186.78 грн |
| 500+ | 176.21 грн |
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Технічний опис IPP200N25N3GXKSA1 Infineon Technologies
Description: MOSFET N-CH 250V 64A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 64A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 270µA, Supplier Device Package: PG-TO220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V.
Інші пропозиції IPP200N25N3GXKSA1 за ціною від 162.99 грн до 519.87 грн
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IPP200N25N3GXKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 250V 64A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 64A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V |
на замовлення 1399 шт: термін постачання 21-31 дні (днів) |
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IPP200N25N3GXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO220-3 Kind of package: tube Kind of channel: enhancement Mounting: THT Case: PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 250V Drain current: 64A On-state resistance: 20mΩ Power dissipation: 300W Gate-source voltage: ±20V |
на замовлення 44 шт: термін постачання 14-30 дні (днів) |
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| IPP200N25N3GXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 64A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 64A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
Description: MOSFET N-CH 250V 64A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 64A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 100 V
на замовлення 1399 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 471.79 грн |
| 50+ | 241.68 грн |
| 100+ | 221.15 грн |
| 500+ | 173.82 грн |
| 1000+ | 162.99 грн |
| IPP200N25N3GXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO220-3
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Case: PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
On-state resistance: 20mΩ
Power dissipation: 300W
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO220-3
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Case: PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
On-state resistance: 20mΩ
Power dissipation: 300W
Gate-source voltage: ±20V
на замовлення 44 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 519.87 грн |