IPP45P03P4L11AKSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 45A TO220-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +5V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 85µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Технічний опис IPP45P03P4L11AKSA1 Infineon Technologies
Description: MOSFET P-CH 30V 45A TO220-3, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +5V, -16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PG-TO220-3-1, Vgs(th) (Max) @ Id: 2V @ 85µA, Power Dissipation (Max): 58W (Tc), Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції IPP45P03P4L11AKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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IPP45P03P4L11AKSA1 | Infineon Technologies |
Description: MOSFET P-CH 30V 45A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 2V @ 85µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IPP45P03P4L11AKSA1 | INFINEON |
Description: INFINEON - IPP45P03P4L11AKSA1 - Leistungs-MOSFET, p-Kanal, 30 V, 45 A, 0.009 ohm, TO-220, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 45 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 58 Bauform - Transistor: TO-220 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3 Produktpalette: OptiMOS P2 Wandlerpolarität: p-Kanal Betriebswiderstand, Rds(on): 0.009 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 1.5 SVHC: No SVHC (27-Jun-2018) |
товару немає в наявності |
В кошику од. на суму грн. |
| IPP45P03P4L11AKSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| IPP45P03P4L11AKSA1 |
|
Виробник: INFINEON
Description: INFINEON - IPP45P03P4L11AKSA1 - Leistungs-MOSFET, p-Kanal, 30 V, 45 A, 0.009 ohm, TO-220, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 45
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 58
Bauform - Transistor: TO-220
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 3
Produktpalette: OptiMOS P2
Wandlerpolarität: p-Kanal
Betriebswiderstand, Rds(on): 0.009
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 1.5
SVHC: No SVHC (27-Jun-2018)
Description: INFINEON - IPP45P03P4L11AKSA1 - Leistungs-MOSFET, p-Kanal, 30 V, 45 A, 0.009 ohm, TO-220, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 45
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 58
Bauform - Transistor: TO-220
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 3
Produktpalette: OptiMOS P2
Wandlerpolarität: p-Kanal
Betriebswiderstand, Rds(on): 0.009
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 1.5
SVHC: No SVHC (27-Jun-2018)
товару немає в наявності
В кошику
од. на суму грн.