| Кількість | Ціна |
|---|---|
| 1+ | 728.55 грн |
| 10+ | 615.21 грн |
| 100+ | 446.15 грн |
| 250+ | 419.37 грн |
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Технічний опис IPP60R016CM8XKSA1 Infineon Technologies
Description: IPP60R016CM8XKSA1, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 135A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 62.5A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 4.7V @ 1.48mA, Supplier Device Package: PG-TO220-3-1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7545 pF @ 400 V.
Інші пропозиції IPP60R016CM8XKSA1 за ціною від 331.79 грн до 746.15 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IPP60R016CM8XKSA1 | Infineon Technologies |
 Description: IPP60R016CM8XKSA1Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 135A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 62.5A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 1.48mA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7545 pF @ 400 V |
на замовлення 674 шт: термін постачання 21-31 дні (днів) |
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| IPP60R016CM8XKSA1 |
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Виробник: Infineon Technologies
Description: IPP60R016CM8XKSA1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 62.5A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7545 pF @ 400 V
Description: IPP60R016CM8XKSA1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 62.5A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7545 pF @ 400 V
на замовлення 674 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 746.15 грн |
| 50+ | 403.51 грн |
| 100+ | 373.18 грн |
| 500+ | 331.79 грн |