| Кількість | Ціна |
|---|---|
| 1+ | 338.79 грн |
| 10+ | 331.51 грн |
| 25+ | 192.42 грн |
| 100+ | 186.07 грн |
| 250+ | 185.37 грн |
| 500+ | 175.50 грн |
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Технічний опис IPP60R040S7XKSA1 Infineon Technologies
Description: INFINEON - IPP60R040S7XKSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 13 A, 0.036 ohm, TO-220, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 600V, rohsCompliant: YES, Dauer-Drainstrom Id: 13A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 4V, euEccn: NLR, Verlustleistung: 245W, Bauform - Transistor: TO-220, Anzahl der Pins: 3Pin(s), Produktpalette: CoolMOS SJ S7 Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 12V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.036ohm, SVHC: No SVHC (21-Jan-2025).
Інші пропозиції IPP60R040S7XKSA1 за ціною від 211.66 грн до 378.26 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IPP60R040S7XKSA1 | Infineon Technologies |
 Description: HIGH POWER_NEW PG-TO220-3Part Status: Active Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 4.5V @ 790µA Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 12V |
на замовлення 211 шт: термін постачання 21-31 дні (днів) |
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IPP60R040S7XKSA1 | INFINEON |
Description: INFINEON - IPP60R040S7XKSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 13 A, 0.036 ohm, TO-220, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 13A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 245W Bauform - Transistor: TO-220 Anzahl der Pins: 3Pin(s) Produktpalette: CoolMOS SJ S7 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.036ohm SVHC: No SVHC (21-Jan-2025) |
на замовлення 411 шт: термін постачання 21-31 дні (днів) |
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| IPP60R040S7XKSA1 |
|
Виробник: Infineon Technologies
Description: HIGH POWER_NEW PG-TO220-3
Part Status: Active
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Description: HIGH POWER_NEW PG-TO220-3
Part Status: Active
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
на замовлення 211 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 376.64 грн |
| 50+ | 217.66 грн |
| 100+ | 211.66 грн |
| IPP60R040S7XKSA1 |
|
Виробник: INFINEON
Description: INFINEON - IPP60R040S7XKSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 13 A, 0.036 ohm, TO-220, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600V
rohsCompliant: YES
Dauer-Drainstrom Id: 13A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 245W
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: CoolMOS SJ S7 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 12V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.036ohm
SVHC: No SVHC (21-Jan-2025)
Description: INFINEON - IPP60R040S7XKSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 13 A, 0.036 ohm, TO-220, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600V
rohsCompliant: YES
Dauer-Drainstrom Id: 13A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 245W
Bauform - Transistor: TO-220
Anzahl der Pins: 3Pin(s)
Produktpalette: CoolMOS SJ S7 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 12V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.036ohm
SVHC: No SVHC (21-Jan-2025)
на замовлення 411 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 378.26 грн |
| 10+ | 375.79 грн |
| 100+ | 242.58 грн |