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IPP60R060P7 INFINEON TECHNOLOGIES

Name: IPP60R060P7
Brand: INFINEON TECHNOLOGIES
SKU: 459848660-1
Price: 508.65 UAH
Availability: BackOrder

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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 164W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт

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Технічний опис IPP60R060P7 INFINEON TECHNOLOGIES

Description: 600V, 0.06OHM, N-CHANNEL MOSFET,, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V, Power Dissipation (Max): 164W (Tc), Vgs(th) (Max) @ Id: 4V @ 800µA, Supplier Device Package: PG-TO220-3-123, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V.

Інші пропозиції IPP60R060P7

Назва	Виробник	Інформація	Доступність	Ціна
IPP60R060P7	Виробник : Infineon Technologies	Description: 600V, 0.06OHM, N-CHANNEL MOSFET, Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V Power Dissipation (Max): 164W (Tc) Vgs(th) (Max) @ Id: 4V @ 800µA Supplier Device Package: PG-TO220-3-123 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V	товару немає в наявності	В кошику од. на суму грн.
IPP60R060P7	Виробник : Infineon Technologies	MOSFETs HIGH POWER_NEW	товару немає в наявності	В кошику од. на суму грн.
IPP60R060P7	Виробник : INFINEON TECHNOLOGIES	Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 164W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 164W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement	товару немає в наявності	В кошику од. на суму грн.