IPP60R065S7XKSA1 Infineon Technologies

Description: HIGH POWER_NEW PG-TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 8A, 12V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 490µA, Supplier Device Package: PG-TO220-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 1932 pF @ 300 V.