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IPP60R099CPAAKSA1

IPP60R099CPAAKSA1 Infineon Technologies

Infineon-IPP60R099CPA-DS-v02_02-en.pdf?folderId=db3a30431a5c32f2011a8084a04a6500&fileId=db3a304328c6bd5c0128ee27172b59dc&ack=t
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 31A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Qualification: AEC-Q101
на замовлення 33500 шт:
термін постачання 21-31 дні (днів)
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49+407.22 грн
Мінімальне замовлення: 49
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Технічний опис IPP60R099CPAAKSA1 Infineon Technologies

Description: MOSFET N-CH 600V 31A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 31A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V, Power Dissipation (Max): 255W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1.2mA, Supplier Device Package: PG-TO220-3, Grade: Automotive, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V, Qualification: AEC-Q101.

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IPP60R099CPAAKSA1 IPP60R099CPAAKSA1 Виробник : Infineon Technologies Infineon-IPP60R099CPA-DS-v02_02-en.pdf?folderId=db3a30431a5c32f2011a8084a04a6500&fileId=db3a304328c6bd5c0128ee27172b59dc&ack=t Description: MOSFET N-CH 600V 31A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO220-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Qualification: AEC-Q101
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IPP60R099CPAAKSA1 IPP60R099CPAAKSA1 Виробник : Infineon Technologies Infineon_IPP60R099CPA_DS_v02_02_EN-3164892.pdf MOSFETs AUTOMOTIVE_COOLMOS
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