Технічний опис IPP60R105CFD7XKSA1 Infineon Technologies
Description: MOSFET N CH, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 9.3A, 10V, Power Dissipation (Max): 106W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 470µA, Supplier Device Package: PG-TO220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1752 pF @ 400 V.
Інші пропозиції IPP60R105CFD7XKSA1 за ціною від 381.25 грн до 381.25 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||
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IPP60R105CFD7XKSA1 | Infineon Technologies |
 Description: MOSFET N CHPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 9.3A, 10V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 470µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1752 pF @ 400 V |
на замовлення 34 шт: термін постачання 21-31 дні (днів) |
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IPP60R105CFD7XKSA1 | INFINEON |
Description: INFINEON - IPP60R105CFD7XKSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 21 A, 0.089 ohm, TO-220, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600 Dauer-Drainstrom Id: 21 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 106 Bauform - Transistor: TO-220 Anzahl der Pins: 3 Produktpalette: CoolMOS CFD7 Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.089 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 4 SVHC: No SVHC (08-Jul-2021) |
на замовлення 474 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| IPP60R105CFD7XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N CH
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 9.3A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1752 pF @ 400 V
Description: MOSFET N CH
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 9.3A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 470µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1752 pF @ 400 V
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 381.25 грн |
| IPP60R105CFD7XKSA1 |
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Виробник: INFINEON
Description: INFINEON - IPP60R105CFD7XKSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 21 A, 0.089 ohm, TO-220, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600
Dauer-Drainstrom Id: 21
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 106
Bauform - Transistor: TO-220
Anzahl der Pins: 3
Produktpalette: CoolMOS CFD7
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.089
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 4
SVHC: No SVHC (08-Jul-2021)
Description: INFINEON - IPP60R105CFD7XKSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 21 A, 0.089 ohm, TO-220, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600
Dauer-Drainstrom Id: 21
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 106
Bauform - Transistor: TO-220
Anzahl der Pins: 3
Produktpalette: CoolMOS CFD7
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.089
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 4
SVHC: No SVHC (08-Jul-2021)
на замовлення 474 шт:
термін постачання 21-31 дні (днів)