Технічний опис IPP60R190E6XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 20.2A TO220-3, Vgs(th) (Max) @ Id: 3.5V @ 630µA, Power Dissipation (Max): 151W (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Not For New Designs, Supplier Device Package: PG-TO220-3.
Інші пропозиції IPP60R190E6XKSA1 за ціною від 83.83 грн до 267.34 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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IPP60R190E6XKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 600V 20.2A TO220-3Vgs(th) (Max) @ Id: 3.5V @ 630µA Power Dissipation (Max): 151W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: PG-TO220-3 |
на замовлення 1839 шт: термін постачання 21-31 дні (днів) |
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| IPP60R190E6XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20.2A TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3
Description: MOSFET N-CH 600V 20.2A TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO220-3
на замовлення 1839 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 267.34 грн |
| 50+ | 130.26 грн |
| 100+ | 117.92 грн |
| 500+ | 90.35 грн |
| 1000+ | 83.83 грн |