IPP60R1K4C6XKSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Power Dissipation (Max): 28.4W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
| Кількість | Ціна |
|---|---|
| 568+ | 35.88 грн |
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Технічний опис IPP60R1K4C6XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO220-3, Vgs(th) (Max) @ Id: 3.5V @ 90µA, Power Dissipation (Max): 28.4W (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції IPP60R1K4C6XKSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IPP60R1K4C6XKSA1 | Виробник : Infineon Technologies |
MOSFET N-Ch 650V 3.2A TO220-3 |
на замовлення 330 шт: термін постачання 21-30 дні (днів) |
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IPP60R1K4C6XKSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 600V 3.2A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V Power Dissipation (Max): 28.4W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V |
товару немає в наявності |