Технічний опис IPP60R280P6 Infineon
Description: POWER FIELD-EFFECT TRANSISTOR, Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO220-3-1, Vgs(th) (Max) @ Id: 4.5V @ 430µA, Power Dissipation (Max): 104W (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V.
Інші пропозиції IPP60R280P6
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IPP60R280P6 | Infineon Technologies |
 Description: POWER FIELD-EFFECT TRANSISTORCurrent - Continuous Drain (Id) @ 25°C: 13.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 4.5V @ 430µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IPP60R280P6 | Infineon Technologies |
MOSFETs N-Ch 600V 13.8A TO220-3 |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. |
| IPP60R280P6 |
|
Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Description: POWER FIELD-EFFECT TRANSISTOR
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
товару немає в наявності
В кошику
од. на суму грн.
| IPP60R280P6 |
|
Виробник: Infineon Technologies
MOSFETs N-Ch 600V 13.8A TO220-3
MOSFETs N-Ch 600V 13.8A TO220-3
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.