Технічний опис IPP60R380C6 INFINEON
Description: POWER FIELD-EFFECT TRANSISTOR, 1, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk, Part Status: Active, Drain to Source Voltage (Vdss): 600 V, Power Dissipation (Max): 83W (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V, Supplier Device Package: PG-TO220-3-1, Vgs(th) (Max) @ Id: 3.5V @ 320µA, Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Operating Temperature: -55°C ~ 150°C (TJ).
Інші пропозиції IPP60R380C6
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| IPP60R380C6 | Infineon Technologies |
Description: POWER FIELD-EFFECT TRANSISTOR, 1Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk Part Status: Active Drain to Source Voltage (Vdss): 600 V Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 3.5V @ 320µA Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Operating Temperature: -55°C ~ 150°C (TJ) |
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В кошику од. на суму грн. | |
|
IPP60R380C6 | Infineon Technologies |
MOSFET N-Ch 600V 10.6A TO220-3 CoolMOS C6 |
товару немає в наявності |
В кошику од. на суму грн. |
| IPP60R380C6 |
![]() |
Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Operating Temperature: -55°C ~ 150°C (TJ)
товару немає в наявності
В кошику
од. на суму грн.
| IPP60R380C6 |
![]() |
Виробник: Infineon Technologies
MOSFET N-Ch 600V 10.6A TO220-3 CoolMOS C6
MOSFET N-Ch 600V 10.6A TO220-3 CoolMOS C6
товару немає в наявності
В кошику
од. на суму грн.



