Технічний опис IPP60R450E6XKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 9.2A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO220-3, Vgs(th) (Max) @ Id: 3.5V @ 280µA, Power Dissipation (Max): 74W (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції IPP60R450E6XKSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IPP60R450E6XKSA1 | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 600V 9.2A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 3.5V @ 280µA Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |