Технічний опис IPP65R075CFD7AAKSA1 Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V, Power Dissipation (Max): 171W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 820µA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V.
Інші пропозиції IPP65R075CFD7AAKSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IPP65R075CFD7AAKSA1 | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 650V 32A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101 |
товару немає в наявності |
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IPP65R075CFD7AAKSA1 | Виробник : Infineon Technologies |
Description: AUTOMOTIVE_COOLMOS PG-TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V Power Dissipation (Max): 171W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 820µA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V |
товару немає в наявності |
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IPP65R075CFD7AAKSA1 | Виробник : Infineon Technologies |
MOSFETs AUTOMOTIVE_COOLMOS |
товару немає в наявності |