| Кількість | Ціна |
|---|---|
| 1+ | 375.79 грн |
| 25+ | 193.72 грн |
| 100+ | 155.06 грн |
| 500+ | 137.44 грн |
| 1000+ | 130.39 грн |
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Технічний опис IPP65R090CFD7XKSA1 Infineon Technologies
Description: HIGH POWER_NEW, Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO220-3, Vgs(th) (Max) @ Id: 4.5V @ 630µA, Power Dissipation (Max): 127W (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Інші пропозиції IPP65R090CFD7XKSA1 за ціною від 198.67 грн до 427.39 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IPP65R090CFD7XKSA1 | Infineon Technologies |
 Description: HIGH POWER_NEWInput Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 4.5V @ 630µA Power Dissipation (Max): 127W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 190 шт: термін постачання 21-31 дні (днів) |
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| IPP65R090CFD7XKSA1 |
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Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 127W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: HIGH POWER_NEW
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 127W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 12.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 190 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 427.39 грн |
| 50+ | 217.43 грн |
| 100+ | 198.67 грн |