Технічний опис IPP65R099C6XKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 38A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1.2mA, Supplier Device Package: PG-TO220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V.
Інші пропозиції IPP65R099C6XKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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IPP65R099C6XKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 650V 38A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Supplier Device Package: PG-TO220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V |
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IPP65R099C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Power dissipation: 278W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: CoolMOS™ |
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 |
IPP65R099C6XKSA1 | INFINEON |
Description: INFINEON - IPP65R099C6XKSA1 - Leistungs-MOSFET, n-Kanal, 650 V, 38 A, 0.089 ohm, TO-220, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650 Dauer-Drainstrom Id: 38 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 278 Gate-Source-Schwellenspannung, max.: 3 Verlustleistung: 278 Bauform - Transistor: TO-220 Anzahl der Pins: 3 Produktpalette: CoolMOS C6 Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.089 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.089 SVHC: No SVHC (27-Jun-2018) |
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В кошику од. на суму грн. |
| IPP65R099C6XKSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 38A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
Description: MOSFET N-CH 650V 38A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| IPP65R099C6XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
товару немає в наявності
В кошику
од. на суму грн.
| IPP65R099C6XKSA1 |
|
Виробник: INFINEON
Description: INFINEON - IPP65R099C6XKSA1 - Leistungs-MOSFET, n-Kanal, 650 V, 38 A, 0.089 ohm, TO-220, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650
Dauer-Drainstrom Id: 38
Qualifikation: -
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 278
Gate-Source-Schwellenspannung, max.: 3
Verlustleistung: 278
Bauform - Transistor: TO-220
Anzahl der Pins: 3
Produktpalette: CoolMOS C6
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.089
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.089
SVHC: No SVHC (27-Jun-2018)
Description: INFINEON - IPP65R099C6XKSA1 - Leistungs-MOSFET, n-Kanal, 650 V, 38 A, 0.089 ohm, TO-220, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 650
Dauer-Drainstrom Id: 38
Qualifikation: -
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 278
Gate-Source-Schwellenspannung, max.: 3
Verlustleistung: 278
Bauform - Transistor: TO-220
Anzahl der Pins: 3
Produktpalette: CoolMOS C6
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.089
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.089
SVHC: No SVHC (27-Jun-2018)
товару немає в наявності
В кошику
од. на суму грн.