Продукція > INFINEON TECHNOLOGIES > IPP80N04S303AKSA1
IPP80N04S303AKSA1

IPP80N04S303AKSA1 Infineon Technologies

IPx80N04S3-03.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Qualification: AEC-Q101
на замовлення 345 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
218+92.78 грн
Мінімальне замовлення: 218
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис IPP80N04S303AKSA1 Infineon Technologies

Description: MOSFET N-CH 40V 80A TO220-3, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-TO220-3-1, Vgs(th) (Max) @ Id: 4V @ 120µA, Power Dissipation (Max): 188W (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc).

Інші пропозиції IPP80N04S303AKSA1

Фото Назва Виробник Інформація Доступність
Ціна
IPP80N04S303AKSA1 IPP80N04S303AKSA1 Виробник : Infineon Technologies IPx80N04S3-03.pdf Description: MOSFET N-CH 40V 80A TO220-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 120µA
Power Dissipation (Max): 188W (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
товару немає в наявності
В кошику  од. на суму  грн.