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IPP80N04S4L04AKSA1

IPP80N04S4L04AKSA1 Infineon Technologies

Infineon-IPP_B_I80N04S4L_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c780c375e1e&ack=t
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220-3-1
Qualification: AEC-Q101
Grade: Automotive
Vgs (Max): +20V, -16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Power Dissipation (Max): 71W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
на замовлення 622 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
268+81.92 грн
Мінімальне замовлення: 268 шт
В кошику  од. на суму  грн.
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Технічний опис IPP80N04S4L04AKSA1 Infineon Technologies

Description: MOSFET N-CH 40V 80A TO220-3-1, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V, Power Dissipation (Max): 71W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 35µA, Supplier Device Package: PG-TO220-3-1, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V, Qualification: AEC-Q101.

Інші пропозиції IPP80N04S4L04AKSA1

Фото Назва Виробник Інформація Доступність Ціна
IPP80N04S4L04AKSA1 IPP80N04S4L04AKSA1 Infineon Technologies Infineon-IPP_B_I80N04S4L_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c780c375e1e&ack=t Description: MOSFET N-CH 40V 80A TO220-3-1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
IPP80N04S4L04AKSA1 Infineon-IPP_B_I80N04S4L_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c780c375e1e&ack=t
IPP80N04S4L04AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO220-3-1
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.