Технічний опис IPP80N06S2-09 INF
Description: IPP80N06 - 55V-60V N-CHANNEL AUT, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V, Power Dissipation (Max): 190W (Tc), Vgs(th) (Max) @ Id: 4V @ 125µA, Supplier Device Package: PG-TO220-3-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 25 V.
Інші пропозиції IPP80N06S2-09
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IPP80N06S2-09 | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-220AB Tube |
товару немає в наявності |
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IPP80N06S2-09 | Виробник : Infineon Technologies |
Description: IPP80N06 - 55V-60V N-CHANNEL AUT Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 125µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 25 V |
товару немає в наявності |
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IPP80N06S2-09 | Виробник : Infineon Technologies |
MOSFET N-Ch 55V 80A TO220-3 OptiMOS |
товару немає в наявності |