Технічний опис IPP80N06S2L-07 INF
Description: MOSFET N-CH 55V 80A TO220-3, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: PG-TO220-3-1, Vgs(th) (Max) @ Id: 2V @ 150µA, Power Dissipation (Max): 210W (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc).
Інші пропозиції IPP80N06S2L-07
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
IPP80N06S2L-07 | Infineon Technologies |
Description: MOSFET N-CH 55V 80A TO220-3FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Discontinued at Digi-Key Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 2V @ 150µA Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) |
товару немає в наявності |
В кошику од. на суму грн. |
|
IPP80N06S2L-07 | Infineon Technologies |
MOSFET N-Ch 55V 80A TO220-3 OptiMOS |
товару немає в наявності |
В кошику од. на суму грн. |
| IPP80N06S2L-07 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO220-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 150µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Description: MOSFET N-CH 55V 80A TO220-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 150µA
Power Dissipation (Max): 210W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
товару немає в наявності
В кошику
од. на суму грн.
| IPP80N06S2L-07 |
![]() |
Виробник: Infineon Technologies
MOSFET N-Ch 55V 80A TO220-3 OptiMOS
MOSFET N-Ch 55V 80A TO220-3 OptiMOS
товару немає в наявності
В кошику
од. на суму грн.




