IPP80R1K2P7 Infineon Technologies
Виробник: Infineon Technologies
Description: IPP80R1K2 - 800V COOLMOS N-CHANN
Part Status: Active
Packaging: Bulk
Відгуки про товар
Написати відгук
Технічний опис IPP80R1K2P7 Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3; ESD, Type of transistor: N-MOSFET, Technology: CoolMOS™ P7, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 3.1A, Power dissipation: 37W, Case: PG-TO220-3, Gate-source voltage: ±20V, On-state resistance: 1.2Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Gate charge: 11nC, Version: ESD.
Інші пропозиції IPP80R1K2P7 за ціною від 76.19 грн до 114.87 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPP80R1K2P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.1A Power dissipation: 37W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 11nC Version: ESD |
на замовлення 322 шт: термін постачання 14-30 дні (днів) |
|
| IPP80R1K2P7XKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 11nC
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 11nC
Version: ESD
на замовлення 322 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 114.87 грн |
| 10+ | 88.88 грн |
| 15+ | 85.50 грн |
| 50+ | 78.73 грн |
| 150+ | 76.19 грн |