| Кількість | Ціна |
|---|---|
| 2+ | 193.24 грн |
| 10+ | 107.80 грн |
| 100+ | 84.58 грн |
| 250+ | 76.12 грн |
| 500+ | 67.66 грн |
| 1000+ | 58.29 грн |
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Технічний опис IPP80R450P7XKSA1 Infineon Technologies
Description: MOSFET N-CH 800V 11A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V, Power Dissipation (Max): 73W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 220µA, Supplier Device Package: PG-TO220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V.
Інші пропозиції IPP80R450P7XKSA1 за ціною від 55.63 грн до 202.99 грн
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IPP80R450P7XKSA1 | Infineon Technologies |
 Description: MOSFET N-CH 800V 11A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V Power Dissipation (Max): 73W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 220µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V |
на замовлення 5467 шт: термін постачання 21-31 дні (днів) |
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| IPP80R450P7XKSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
Description: MOSFET N-CH 800V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
на замовлення 5467 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 202.99 грн |
| 50+ | 97.19 грн |
| 100+ | 89.18 грн |
| 500+ | 66.21 грн |
| 1000+ | 61.09 грн |
| 2000+ | 57.05 грн |
| 5000+ | 55.63 грн |